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NTE2942 MOSFET N-Channel, Enhancement Mode High Speed Switch
Features: D Low Static Drain-Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D TO220 Type Isolated Package Absolute Maximum Ratings: Drain-Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain-Gate Voltage (RGS = 1M, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Drain Current, ID Continuous TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.7A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.8A Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28mJ Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.7A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.28W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . +300C Thermal Resistance: Maximum Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.57K/W Typical Case-to-Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . . 0.5K/W Maximum Junction-to-Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . 62.5K/W Note 1. TJ = +25 to +150C. Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 3. L = 0.53mH, VDD = 25V, RG = 25, Starting TJ = +25C.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Forward Gate-Source Leakage Reverse Zero Gate Voltage Drain Current Symbol BVDSS VGS(th) IGSS IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr (Body Diode) (Body Diode) Note 2 TJ = +25C, IS = 14A, VGS = 0V, Note 4 TJ = +25C, IF = 14A, dIF/dt = 100A/s VGS = 10V, ID = 14A, VDS = 0.8 Max. Rating, (Gate charge is essentially independent of operating temperature) VDD = 0.5 BVDSS, ID = 14A, ZO = 9.1, (MOSFET switching times are essentially independent of operating temperature) Test Conditions VGS = 0V, ID = 250A VDS = VGS, ID = 250A VGS = 20V VGS = -20V VDS = Max. Rating, VGS = 0 VDS = 0.8 Max. Rating, TC = +150C Static Drain-Source ON Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate-Source Plus Gate-Drain) Gate-Source Charge Gate-Drain ("Miller") Charge VGS = 10V, ID = 7A, Note 4 VDS 50V, ID = 7A, Note 4 VGS = 0V, VDS = 25V, f = 1MHz Min 100 2.0 - - - - - 5.1 - - - - - - - - - - Typ - - - - - - - 7.6 640 240 72 10 34 23 24 - 7.1 14.6 Max - 4.0 100 -100 250 1000 0.16 - - - - 15 51 35 36 36 - - Unit V V nA nA A A mhos pF pF pF ns ns ns ns nC nC nC
Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time - - - - - - - 125 14 56 2.5 250 A A V ns
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
.402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2)
.173 (4.4) Max .114 (2.9) Max
G
D
S
.531 (13.5) Min
.100 (2.54)
.059 (1.5) Max

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